Processing of an atomically smooth Ge(001) surface on a large scale
文献类型：期刊论文
| 作者 | Qin, ZH ; Shi, DX ; Ji, W ; Pan, SJ ; Gao, HJ |
| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2006 |
| 卷号 | 17期号:9页码:2396 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY GE CLUSTERS DEFECTS RECONSTRUCTION SI(100)-2X1 SI(001) AG |
| ISSN号 | 0957-4484 |
| 通讯作者 | Gao, HJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | An atomically smooth Ge(001) surface on a large scale is obtained by deposition of submonolayer Ge on a Ge( 001) surface at 300 degrees C, which repairs the missing dimer defects produced during the enhanced energy ion bombardment and annealing of the substrate. The Ge( 001) samples are characterized by scanning tunnelling microscopy (STM) before and after the submonolayer Ge deposition. The ion bombardment/subsequent annealing processing and STM tip induced defects are also investigated in detail. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51483]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Qin, ZH,Shi, DX,Ji, W,et al. Processing of an atomically smooth Ge(001) surface on a large scale[J]. NANOTECHNOLOGY,2006,17(9):2396. |
| APA | Qin, ZH,Shi, DX,Ji, W,Pan, SJ,&Gao, HJ.(2006).Processing of an atomically smooth Ge(001) surface on a large scale.NANOTECHNOLOGY,17(9),2396. |
| MLA | Qin, ZH,et al."Processing of an atomically smooth Ge(001) surface on a large scale".NANOTECHNOLOGY 17.9(2006):2396. |
入库方式： OAI收割
来源：物理研究所
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