中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Properties of deep levels and photorefractive effect in GaAs/AlGaAs multiple quantum wells grown in low temperature

文献类型:期刊论文

作者Huang, Q ; Guo, LW ; Zhang, MH ; Zhang, YF ; Han, YJ ; Zhou, JM
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2001
卷号227页码:117
关键词BEAM-EPITAXIAL GAAS SPATIAL LIGHT MODULATORS DEFECT TRAP EL2
ISSN号0022-0248
通讯作者Guo, LW (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要Room-temperature strong exciton-photon coupling phenomena was studied in a low-finesse quantum microcavity entirely filled with 17.5 pairs of GaAs (80 Angstrom )Al0.3Ga0.7As (42 Angstrom) quantum wells. The front and back distributed Bragg reflectors of the microcavity consist of only 6 and 8 pairs of lambda /4 stacks of GaAs (30 Angstrom)/AlAs (5 Angstrom) superlattices and AlAs layers. And the lambda /4 GaAs (30 Angstrom)/AlAs (5 Angstrom) superlattices are equal to the Al0.2Ga0.8As layer in thc distributed Bragg reflector. Large Rabi splitting of 9.4meV was observed at resonance with heavy-hole excitons at room temperature. Photoluminescence spectra show cd a transition from linear regime to high carrier density nonlinear regime due to loss of oscillator strength and collapse of the coupling at high excitation intensity. (C) 2001 Published by Elsevier Science B.V.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/51535]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Huang, Q,Guo, LW,Zhang, MH,et al. Properties of deep levels and photorefractive effect in GaAs/AlGaAs multiple quantum wells grown in low temperature[J]. JOURNAL OF CRYSTAL GROWTH,2001,227:117.
APA Huang, Q,Guo, LW,Zhang, MH,Zhang, YF,Han, YJ,&Zhou, JM.(2001).Properties of deep levels and photorefractive effect in GaAs/AlGaAs multiple quantum wells grown in low temperature.JOURNAL OF CRYSTAL GROWTH,227,117.
MLA Huang, Q,et al."Properties of deep levels and photorefractive effect in GaAs/AlGaAs multiple quantum wells grown in low temperature".JOURNAL OF CRYSTAL GROWTH 227(2001):117.

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来源:物理研究所

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