Proximity effect at superconducting Sn-Bi2Se3 interface
文献类型：期刊论文
| 作者 | Yang, F ; Ding, Y ; Qu, FM ; Shen, J ; Chen, J ; Wei, ZC ; Ji, ZQ ; Liu, GT ; Fan, J ; Yang, CL ; Xiang, T ; Lu, L |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2012 |
| 卷号 | 85期号:10 |
| 关键词 | TOPOLOGICAL INSULATORS ANDREEV-REFLECTION SURFACE STATES MICROJUNCTIONS CONDUCTANCE TRANSITION TRANSPORT JUNCTIONS SR2RUO4 |
| ISSN号 | 1098-0121 |
| 通讯作者 | Lu, L (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Daniel Chee Tsui Lab, Beijing 100190, Peoples R China. |
| 中文摘要 | Three different Ti-Si nanocomposite thin films are prepared by the co-sputtering method with Si target and Ti target. The film thickness ranges between 250 and 480 nm. X-ray diffraction (XRD), high resolution transmission electron miscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) reveal significant charge transfer between Ti and Si and uniform dispersion of Ti-Si alloy nanograins in the amorphous Si thin films. It is found that decreasing the grain size of the TixSiy alloy below 2 nm, can improve the cyclic performance over pure Si thin film electrodes and those containing larger Ti-Si grains. This is mainly related to the improved mechanical properties that result from dispersing small grains of Ti-Si. The throughout thin film cracks formed after 10 electrochemical cycles are finer and more curved compared to the other thin films with the same film thickness. Furthermore, the width of the cracks, as well as, the area and junction angles of the remained fractured particle size of all electrode films considered, is compared and analyzed, after 10 cycles. (C) 2011 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | MOST [2009CB929101, 2011CB921702]; NSFC [11174340, 11174357]; CAS |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51563]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, F,Ding, Y,Qu, FM,et al. Proximity effect at superconducting Sn-Bi2Se3 interface[J]. PHYSICAL REVIEW B,2012,85(10). |
| APA | Yang, F.,Ding, Y.,Qu, FM.,Shen, J.,Chen, J.,...&Lu, L.(2012).Proximity effect at superconducting Sn-Bi2Se3 interface.PHYSICAL REVIEW B,85(10). |
| MLA | Yang, F,et al."Proximity effect at superconducting Sn-Bi2Se3 interface".PHYSICAL REVIEW B 85.10(2012). |
入库方式： OAI收割
来源：物理研究所
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