Pulsed high energy density plasma processing silicon surface
文献类型：期刊论文
| 作者 | Liu, B ; Liu, CZ ; Cheng, DJ ; He, R ; Yang, SZ |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2001 |
| 卷号 | 390期号:1-2页码:149 |
| 关键词 | ION-BEAM C49-TISI2 |
| ISSN号 | 0040-6090 |
| 通讯作者 | Liu, B (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Pulsed high energy density plasma (PHEDP) is a new material modification technique, which has the features of: high energy density (1-10 J/cm(2)), high plasma density (10(14)-10(16) cm(-3)), high electron temperature (10-100 eV), high directed plasma velocity (10-100 km/s) and short pulse duration (10-100 mus). PHEDP interacting with material will result in rapid melting and re-solidification of surface layer with a quenching rate up to 10(8) K/s; thus the material surface properties are modified. At the same time, PHEDP contains condensable ions or/and atoms, so a thin film layer can be formed on the modified surface and the deposited layer can be mixed with the substrate (or previous deposited layer) during following pulses. Therefore, this technique actually combines film deposition and mixing into one step. In this paper, we have reported the research results on the metallization of Si by PHEDP. The Ti-Si reactions under PHEDP are also discussed. (C) 2001 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51593]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, B,Liu, CZ,Cheng, DJ,et al. Pulsed high energy density plasma processing silicon surface[J]. THIN SOLID FILMS,2001,390(1-2):149. |
| APA | Liu, B,Liu, CZ,Cheng, DJ,He, R,&Yang, SZ.(2001).Pulsed high energy density plasma processing silicon surface.THIN SOLID FILMS,390(1-2),149. |
| MLA | Liu, B,et al."Pulsed high energy density plasma processing silicon surface".THIN SOLID FILMS 390.1-2(2001):149. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。