Quantitative Model of Heterogeneous Nucleation and Growth of SiGe Quantum Dot Molecules
文献类型：期刊论文
| 作者 | Hu, H ; Gao, HJ ; Liu, F |
| 刊名 | PHYSICAL REVIEW LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 109期号:10 |
| 关键词 | SELF-ASSEMBLED NANOHOLES SURFACE-MORPHOLOGY STRAINED ISLANDS EVOLUTION EPITAXY STRESS LAYERS FILMS SHAPE |
| ISSN号 | 0031-9007 |
| 通讯作者 | Liu, F (reprint author), Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA. |
| 中文摘要 | Using a multiscale approach combining continuum model with first-principles calculation, we develop a quantitative theoretical model for heterogeneous nucleation and the growth of a quantum dot molecule-a few islands "strain bonded" by a pit in heteroepitaxy of thin films, in contrast to homogeneous nucleation and growth of isolated strain islands on the surface. We show that the critical size and energy barrier for island nucleation next to a pit is substantially reduced with the increasing pit size, but the reduction approaches an upper bound of similar to 85% and similar to 72% for the size and barrier, respectively. Our model also predicts a self-limiting effect on island growth, resulting from an intriguing interplay between island-pit attraction and island-island repulsion, that drives the island size to increase linearly with the pit size, which explains a long-standing puzzle of experimental observation. |
| 收录类别 | SCI |
| 资助信息 | DOE-BES program [DE-FG0204ER46148]; NSFC; "973" project; CAS |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51629]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Hu, H,Gao, HJ,Liu, F. Quantitative Model of Heterogeneous Nucleation and Growth of SiGe Quantum Dot Molecules[J]. PHYSICAL REVIEW LETTERS,2012,109(10). |
| APA | Hu, H,Gao, HJ,&Liu, F.(2012).Quantitative Model of Heterogeneous Nucleation and Growth of SiGe Quantum Dot Molecules.PHYSICAL REVIEW LETTERS,109(10). |
| MLA | Hu, H,et al."Quantitative Model of Heterogeneous Nucleation and Growth of SiGe Quantum Dot Molecules".PHYSICAL REVIEW LETTERS 109.10(2012). |
入库方式： OAI收割
来源：物理研究所
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