Quantized Anomalous Hall Effect in Magnetic Topological Insulators
文献类型:期刊论文
作者 | Yu, R ; Zhang, W ; Zhang, HJ ; Zhang, SC ; Dai, X ; Fang, Z |
刊名 | SCIENCE |
出版日期 | 2010 |
卷号 | 329期号:5987页码:61 |
ISSN号 | 0036-8075 |
关键词 | HGTE QUANTUM-WELLS SINGLE DIRAC CONE SEMICONDUCTORS TEMPERATURE REALIZATION SURFACE BI2TE3 |
通讯作者 | Dai, X (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
中文摘要 | The anomalous Hall effect is a fundamental transport process in solids arising from the spin-orbit coupling. In a quantum anomalous Hall insulator, spontaneous magnetic moments and spin-orbit coupling combine to give rise to a topologically nontrivial electronic structure, leading to the quantized Hall effect without an external magnetic field. Based on first-principles calculations, we predict that the tetradymite semiconductors Bi2Te3, Bi2Se3, and Sb2Te3 form magnetically ordered insulators when doped with transition metal elements (Cr or Fe), in contrast to conventional dilute magnetic semiconductors where free carriers are necessary to mediate the magnetic coupling. In two-dimensional thin films, this magnetic order gives rise to a topological electronic structure characterized by a finite Chern number, with the Hall conductance quantized in units of e(2)/h (where e is the charge of an electron and h is Planck's constant). |
资助信息 | National Science Foundation of China; 973 Program of China [2007CB925000, 2010CB923000]; International Science and Technology Cooperation Program of China; U.S. NSF [DMR-0904264] |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
源URL | [http://ir.iphy.ac.cn/handle/311004/51632] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Yu, R,Zhang, W,Zhang, HJ,et al. Quantized Anomalous Hall Effect in Magnetic Topological Insulators[J]. SCIENCE,2010,329(5987):61. |
APA | Yu, R,Zhang, W,Zhang, HJ,Zhang, SC,Dai, X,&Fang, Z.(2010).Quantized Anomalous Hall Effect in Magnetic Topological Insulators.SCIENCE,329(5987),61. |
MLA | Yu, R,et al."Quantized Anomalous Hall Effect in Magnetic Topological Insulators".SCIENCE 329.5987(2010):61. |
入库方式: OAI收割
来源:物理研究所
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