Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3
文献类型：期刊论文
| 作者 | Zhang, GH ; Qin, HJ ; Teng, J ; Guo, JD ; Guo, QL ; Dai, X ; Fang, Z ; Wu, KH |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 95期号:5 |
| 关键词 | SINGLE DIRAC CONE SURFACE BI2TE3 SB2TE3 GROWTH |
| ISSN号 | 0003-6951 |
| 通讯作者 | Wu, KH (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Atomically smooth, single crystalline Bi2Se3 thin films were prepared on Si(111) by molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron emission spectroscopy, and Raman spectroscopy were used to characterize the stoichiometry and crystallinity of the film. The films grow in a self-organized quintuple layer by quintuple-layer mode, and atomically smooth films can be obtained, with controllable thickness down to one quintuple layer (similar to 1 nm). |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation [10874210]; MOST of China [2007CB936800] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51805]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, GH,Qin, HJ,Teng, J,et al. Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3[J]. APPLIED PHYSICS LETTERS,2009,95(5). |
| APA | Zhang, GH.,Qin, HJ.,Teng, J.,Guo, JD.,Guo, QL.,...&Wu, KH.(2009).Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3.APPLIED PHYSICS LETTERS,95(5). |
| MLA | Zhang, GH,et al."Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3".APPLIED PHYSICS LETTERS 95.5(2009). |
入库方式： OAI收割
来源：物理研究所
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