Raman scattering and photoluminescence studies of Er-implanted and Er+ O coimplanted GaN
文献类型：期刊论文
| 作者 | Song, SF ; Chen, WD ; Zhang, CG ; Bian, LF ; Hsu, CC ; Ma, BS ; Li, GH ; Zhu, JJ |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2004 |
| 卷号 | 96期号:9页码:4930 |
| 关键词 | DOPED GAN MG ERBIUM |
| ISSN号 | 0021-8979 |
| 通讯作者 | Song, SF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, POB 912, Beijing 100083, Peoples R China. |
| 中文摘要 | Raman measurements and photoluminescence (PL) were performed on the metal-organic chemical-vapor deposition epitaxially grown GaN before and after the implantation with Er and Er+O. Several Raman defect modes have emerged from the implantation-damaged samples. The structures around 300 and 595 cm(-1) modes are attributed to the disorder-activated Raman scattering, whereas the 670 cm(-1) peak is assigned to nitrogen-vacancy-related defect scattering. One additional peak at 360 cm(-1) arises after Er+O coimplantation. This Raman peak is attributed to the O-implantation-induced defect complex. The appearance of the 360 cm(-1) mode results in the decrease of the Er3+ -related infrared PL intensity for the GaN:Er+O samples. (C) 2004 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51829]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Song, SF,Chen, WD,Zhang, CG,et al. Raman scattering and photoluminescence studies of Er-implanted and Er+ O coimplanted GaN[J]. JOURNAL OF APPLIED PHYSICS,2004,96(9):4930. |
| APA | Song, SF.,Chen, WD.,Zhang, CG.,Bian, LF.,Hsu, CC.,...&Zhu, JJ.(2004).Raman scattering and photoluminescence studies of Er-implanted and Er+ O coimplanted GaN.JOURNAL OF APPLIED PHYSICS,96(9),4930. |
| MLA | Song, SF,et al."Raman scattering and photoluminescence studies of Er-implanted and Er+ O coimplanted GaN".JOURNAL OF APPLIED PHYSICS 96.9(2004):4930. |
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来源：物理研究所
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