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Raman scattering of Ge/Si dot superlattices under hydrostatic pressure

文献类型:期刊论文

作者Qin, L ; Teo, KL ; Shen, ZX ; Peng, CS ; Zhou, JM
刊名PHYSICAL REVIEW B
出版日期2001
卷号64期号:7
关键词GE QUANTUM DOTS STRAINED-LAYER SUPERLATTICES OPTICAL-PROPERTIES SIGE ISLANDS SI(001) PHOTOLUMINESCENCE MICROSCOPY CLUSTERS CONFINEMENT OVERGROWTH
ISSN号1098-0121
通讯作者Teo, KL (reprint author), Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore.
中文摘要We have studied the self-organized Ge/Si quantum dots (QD's) by Raman scattering under hydrostatic pressure near resonance and off resonance with confined Ge-like E-1 transition. The Raman spectra of Ge-Gc, Si-Ge, and the Si acoustic phonon (Si-2TA) modes were obtained as function of pressures in the range 1-70 kbar. Our results show that the Ge-Ge and Si-2TA modes can be easily resolved at low pressure due to a high degree of compressive built-in strain in the Ge layers. The mode Gruneisen parameter of the Ge-Ge phonon mode in QD's is found to be gamma = 0.81 +/- 0.01, which is smaller than the corresponding quantity in bulk Ge. Normalized Raman intensity profiles of Ge-Ge mode exhibit a resonance enhancement peak at similar to 32 kbar. The pressure coefficient a of this resonating electronic transition thus obtained is similar to 5 +/- 1 meV/kbar. This value is smaller than the pressure shift of the E-1 transition in bulk Ge.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/51833]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Qin, L,Teo, KL,Shen, ZX,et al. Raman scattering of Ge/Si dot superlattices under hydrostatic pressure[J]. PHYSICAL REVIEW B,2001,64(7).
APA Qin, L,Teo, KL,Shen, ZX,Peng, CS,&Zhou, JM.(2001).Raman scattering of Ge/Si dot superlattices under hydrostatic pressure.PHYSICAL REVIEW B,64(7).
MLA Qin, L,et al."Raman scattering of Ge/Si dot superlattices under hydrostatic pressure".PHYSICAL REVIEW B 64.7(2001).

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来源:物理研究所

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