Raman scattering of Ge/Si dot superlattices under hydrostatic pressure
文献类型：期刊论文
| 作者 | Qin, L ; Teo, KL ; Shen, ZX ; Peng, CS ; Zhou, JM |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2001 |
| 卷号 | 64期号:7 |
| 关键词 | GE QUANTUM DOTS STRAINED-LAYER SUPERLATTICES OPTICAL-PROPERTIES SIGE ISLANDS SI(001) PHOTOLUMINESCENCE MICROSCOPY CLUSTERS CONFINEMENT OVERGROWTH |
| ISSN号 | 1098-0121 |
| 通讯作者 | Teo, KL (reprint author), Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore. |
| 中文摘要 | We have studied the self-organized Ge/Si quantum dots (QD's) by Raman scattering under hydrostatic pressure near resonance and off resonance with confined Ge-like E-1 transition. The Raman spectra of Ge-Gc, Si-Ge, and the Si acoustic phonon (Si-2TA) modes were obtained as function of pressures in the range 1-70 kbar. Our results show that the Ge-Ge and Si-2TA modes can be easily resolved at low pressure due to a high degree of compressive built-in strain in the Ge layers. The mode Gruneisen parameter of the Ge-Ge phonon mode in QD's is found to be gamma = 0.81 +/- 0.01, which is smaller than the corresponding quantity in bulk Ge. Normalized Raman intensity profiles of Ge-Ge mode exhibit a resonance enhancement peak at similar to 32 kbar. The pressure coefficient a of this resonating electronic transition thus obtained is similar to 5 +/- 1 meV/kbar. This value is smaller than the pressure shift of the E-1 transition in bulk Ge. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51833]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Qin, L,Teo, KL,Shen, ZX,et al. Raman scattering of Ge/Si dot superlattices under hydrostatic pressure[J]. PHYSICAL REVIEW B,2001,64(7). |
| APA | Qin, L,Teo, KL,Shen, ZX,Peng, CS,&Zhou, JM.(2001).Raman scattering of Ge/Si dot superlattices under hydrostatic pressure.PHYSICAL REVIEW B,64(7). |
| MLA | Qin, L,et al."Raman scattering of Ge/Si dot superlattices under hydrostatic pressure".PHYSICAL REVIEW B 64.7(2001). |
入库方式： OAI收割
来源：物理研究所
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