Raman spectral study of silicon nanowires: High-order scattering and phonon confinement effects
文献类型：期刊论文
| 作者 | Wang, RP ; Zhou, GW ; Liu, YL ; Pan, SH ; Zhang, HZ ; Yu, DP ; Zhang, Z |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2000 |
| 卷号 | 61期号:24页码:16827 |
| 关键词 | EXCIMER-LASER ABLATION HIGH-TEMPERATURE MICROCRYSTALS NANOTUBES WIRES SIZE |
| ISSN号 | 1098-0121 |
| 通讯作者 | Wang, RP (reprint author), Chinese Acad Sci, Lab Opt Phys, Inst Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | Raman-scattering spectra of silicon nanowires (SiNW's) with different diameters were obtained at room temperature, The Raman peaks of SiNW's were found to shift and to broaden with decreasing diameter of the SiNW's, In addition to the fundamental phonon modes, overtone and combination modes were also observed and identified according to the selection rules of overtone and combination bands. A phonon confinement model was used to explain the experimental results of observed phonon modes. The results show that the confinement effect becomes more obvious when the SiNW diameter is less than 22 nm. The present results should be of benefit to the applications of SiNW's. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51838]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, RP,Zhou, GW,Liu, YL,et al. Raman spectral study of silicon nanowires: High-order scattering and phonon confinement effects[J]. PHYSICAL REVIEW B,2000,61(24):16827. |
| APA | Wang, RP.,Zhou, GW.,Liu, YL.,Pan, SH.,Zhang, HZ.,...&Zhang, Z.(2000).Raman spectral study of silicon nanowires: High-order scattering and phonon confinement effects.PHYSICAL REVIEW B,61(24),16827. |
| MLA | Wang, RP,et al."Raman spectral study of silicon nanowires: High-order scattering and phonon confinement effects".PHYSICAL REVIEW B 61.24(2000):16827. |
入库方式： OAI收割
来源：物理研究所
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