Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates
文献类型：期刊论文
| 作者 | Cai, LC ; Chen, H ; Bao, CL ; Huang, Q ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2003 |
| 卷号 | 253期号:1-4页码:112 |
| 关键词 | SPATIAL CORRELATION MODEL STRAIN-RELAXATION SCATTERING MBE |
| ISSN号 | 0022-0248 |
| 通讯作者 | Cai, LC (reprint author), Univ Cincinnati, Dept ECECS, Cincinnati, OH 45221 USA. |
| 中文摘要 | The new way to obtain the high-quality InAs epilayers on the GaAs substrates is a two-step growth process: InAs grown directly on the GaAs substrates as the prelayers under In-rich conditions, and then growth of the InAs layers on such prelayers under As-rich conditions (J. Crystal Growth 208 (2000) 795). The optimized growth condition for this method from the Raman spectroscopy and the low-temperature photoluminescence is the following: first InAs is grown 20 nm thick under In-rich conditions at 500degreesC with the appropriate V/III ratio of 8, then InAs is continuously grown under As-rich conditions at 500degreesC with the appropriate V/III ratio of 10-23. With the spatial correlation model, the line shape of first order longitudinal optical phonon Raman spectra of the InAs epilayers grown on the GaAs substrates has been analyzed. It is found that the theoretical line shapes and experimental results have a good agreement. (C) 2003 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51840]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cai, LC,Chen, H,Bao, CL,et al. Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates[J]. JOURNAL OF CRYSTAL GROWTH,2003,253(1-4):112. |
| APA | Cai, LC,Chen, H,Bao, CL,Huang, Q,&Zhou, JM.(2003).Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates.JOURNAL OF CRYSTAL GROWTH,253(1-4),112. |
| MLA | Cai, LC,et al."Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates".JOURNAL OF CRYSTAL GROWTH 253.1-4(2003):112. |
入库方式： OAI收割
来源：物理研究所
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