Reactant-governing growth direction of indium nitride nanowires
文献类型：期刊论文
| 作者 | Liu, H ; Shi, L ; Geng, X ; Su, R ; Cheng, G ; Xie, S |
| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2010 |
| 卷号 | 21期号:24 |
| 关键词 | EPITAXIAL SILICON NANOWIRES INITIO MOLECULAR-DYNAMICS BEAM EPITAXY GAN ORIENTATION POLARITY INN |
| ISSN号 | 0957-4484 |
| 通讯作者 | Liu, H (reprint author), Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou Ind Pk, Jiangsu 215125, Peoples R China. |
| 中文摘要 | Hexagonal wurtzite InN nanowires are grown via a vapor-liquid-solid (VLS) mechanism with an Au catalyst. Microstructure characterizations of a large number of nanowires demonstrate that the growth direction of InN nanowires is governed by variable NH(3) flux. InN nanowires at a NH(3) flux of 10 standard cubic centimeters per minute (sccm) grow preferentially in a hexagonal close-packed (hcp) < 10 (1) over bar0 > direction, while those at 100 sccm NH(3) flux favor the hcp < 0001 > direction. A free energy minimization model is proposed to interpret this phenomenon. The first-principles calculations reveal that the < 10 (1) over bar0 > oriented nucleus has the lowest energy at the lower NH(3) flux. In contrast, when NH(3) flux is high, the < 0001 > oriented nucleus has the lowest energy. |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation of China [10834004]; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51894]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, H,Shi, L,Geng, X,et al. Reactant-governing growth direction of indium nitride nanowires[J]. NANOTECHNOLOGY,2010,21(24). |
| APA | Liu, H,Shi, L,Geng, X,Su, R,Cheng, G,&Xie, S.(2010).Reactant-governing growth direction of indium nitride nanowires.NANOTECHNOLOGY,21(24). |
| MLA | Liu, H,et al."Reactant-governing growth direction of indium nitride nanowires".NANOTECHNOLOGY 21.24(2010). |
入库方式： OAI收割
来源：物理研究所
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