Realization of non-polar ZnO (1 1 (2)over-bar 0) homoepitaxial films with atomically smooth surface by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Zhang, TC ; Mei, ZX ; Kuznetsov, AY ; Du, XL |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2011 |
| 卷号 | 325期号:1页码:93 |
| 关键词 | ROOM-TEMPERATURE GROWTH SAPPHIRE EMISSION DEVICES MOCVD |
| ISSN号 | 0022-0248 |
| 通讯作者 | Mei, ZX (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | A route for realizing non-polar ZnO (1 1 (2) over bar 0) films with atomically smooth surface is demonstrated by employing rf-plasma assisted molecular beam epitaxy on ZnO bulk substrates. It is found that high growth temperature plays an important role in suppressing the typical striped structure along ZnO [0 0 0 1] direction on non-polar planes. An atomically smooth surface with a root mean square roughness of 0.51 nm that is suitable for fabrication of quantum wells is achieved after solving the growth anisotropy problem, as confirmed by the combined studies of reflection high-energy electron diffraction and atomic force microscopy. (C) 2011 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51910]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, TC,Mei, ZX,Kuznetsov, AY,et al. Realization of non-polar ZnO (1 1 (2)over-bar 0) homoepitaxial films with atomically smooth surface by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2011,325(1):93. |
| APA | Zhang, TC,Mei, ZX,Kuznetsov, AY,&Du, XL.(2011).Realization of non-polar ZnO (1 1 (2)over-bar 0) homoepitaxial films with atomically smooth surface by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,325(1),93. |
| MLA | Zhang, TC,et al."Realization of non-polar ZnO (1 1 (2)over-bar 0) homoepitaxial films with atomically smooth surface by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 325.1(2011):93. |
入库方式： OAI收割
来源：物理研究所
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