Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate
文献类型：期刊论文
| 作者 | Jiang, Y ; Jia, HQ ; Wang, WX ; Wang, L ; Chen, H |
| 刊名 | ENERGY & ENVIRONMENTAL SCIENCE
 |
| 出版日期 | 2011 |
| 卷号 | 4期号:8页码:2625 |
| 关键词 | LATERAL EPITAXIAL OVERGROWTH VAPOR-DEPOSITION DENSITY GAN WING-TILT FILMS DEVICES |
| ISSN号 | 1754-5692 |
| 通讯作者 | Jiang, Y (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matters, Beijing 100190, Peoples R China. |
| 中文摘要 | The average increase in the rate of the energy density of secondary batteries has been about 3% in the past 60 years. Obviously, a great breakthrough is needed in order to increase the energy density from the current 210 Wh kg(-1) of Li-ion batteries to the ambitious target of 500-700 Wh kg(-1) to satisfy application in electrical vehicles. A thermodynamic calculation on the theoretical energy densities of 1172 systems is performed and energy storage mechanisms are discussed, aiming to determine the theoretical and practical limits of storing chemical energy and to screen possible systems. Among all calculated systems, the Li/F(2) battery processes the highest energy density and the Li/O(2) battery ranks as the second highest, theoretically about ten times higher than current Li-ion batteries. In this paper, energy densities of Li-ion batteries and a comparison of Li, Na, Mg, Al, Zn-based batteries, Li-storage capacities of the electrode materials and conversion reactions for energy storage, in addition to resource and environmental concerns, are analyzed. |
| 收录类别 | SCI |
| 资助信息 | National Nature Science Foundations [60890192, 50872146, 60877006] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51930]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jiang, Y,Jia, HQ,Wang, WX,et al. Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate[J]. ENERGY & ENVIRONMENTAL SCIENCE,2011,4(8):2625. |
| APA | Jiang, Y,Jia, HQ,Wang, WX,Wang, L,&Chen, H.(2011).Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate.ENERGY & ENVIRONMENTAL SCIENCE,4(8),2625. |
| MLA | Jiang, Y,et al."Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate".ENERGY & ENVIRONMENTAL SCIENCE 4.8(2011):2625. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。