Recording at the nanometer scale on p-nitrobenzonitrile thin films by scanning tunneling microscopy
文献类型：期刊论文
| 作者 | Shi, DX ; Song, YL ; Zhu, DB ; Zhang, HX ; Xie, SH ; Pang, SJ ; Gao, HJ |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2001 |
| 卷号 | 13期号:14页码:1103 |
| 关键词 | DENSITY DATA-STORAGE ORGANIC-COMPLEX ELECTRICAL BISTABILITY RECTIFICATION LITHOGRAPHY MOLECULES SURFACE STM TIP |
| ISSN号 | 0935-9648 |
| 通讯作者 | Gao, HJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Lab Vacuum Phys, POB 2724, Beijing 100080, Peoples R China. |
| 中文摘要 | A data storage density of at least 10(14) bits/cm(2) is possible using p-nitrobenzonitrile as the data storage medium and scanning tunneling microscopy (STM) as the recording method. This represents the smallest mark size among all the organic thin films studied by these authors. The figure shows a typical STM image of a recorded pattern. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51938]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shi, DX,Song, YL,Zhu, DB,et al. Recording at the nanometer scale on p-nitrobenzonitrile thin films by scanning tunneling microscopy[J]. ADVANCED MATERIALS,2001,13(14):1103. |
| APA | Shi, DX.,Song, YL.,Zhu, DB.,Zhang, HX.,Xie, SH.,...&Gao, HJ.(2001).Recording at the nanometer scale on p-nitrobenzonitrile thin films by scanning tunneling microscopy.ADVANCED MATERIALS,13(14),1103. |
| MLA | Shi, DX,et al."Recording at the nanometer scale on p-nitrobenzonitrile thin films by scanning tunneling microscopy".ADVANCED MATERIALS 13.14(2001):1103. |
入库方式： OAI收割
来源：物理研究所
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