RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING
文献类型：期刊论文
| 作者 | XU, TB ; ZHU, PR ; LI, DQ ; REN, TQ ; SUN, HL ; WAN, SK |
| 刊名 | PHYSICS LETTERS A
 |
| 出版日期 | 1994 |
| 卷号 | 189期号:5页码:423 |
| 关键词 | LONGITUDINAL MODE-OPERATION RUTHERFORD BACKSCATTERING ERBIUM ELECTROLUMINESCENCE LASERS |
| ISSN号 | 0375-9601 |
| 通讯作者 | XU, TB (reprint author), CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | The rapid thermal annealing temperature dependence of the recrystallization, Yb migration and its optical activation were studied for Yb-implanted silicon. For the annealing regime 800-1000-degrees-C, the Yb segregates both at the crystal/amorphous interface and at the surface, which is different from the usual segregation of Er at the crystal/amorphous interface, and the efficiency of optical activation also increases with annealing temperature. However, the amorphous layer regrows completely and no photoluminescence is observed after the annealing at 1200-degrees-C. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51940]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | XU, TB,ZHU, PR,LI, DQ,et al. RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING[J]. PHYSICS LETTERS A,1994,189(5):423. |
| APA | XU, TB,ZHU, PR,LI, DQ,REN, TQ,SUN, HL,&WAN, SK.(1994).RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING.PHYSICS LETTERS A,189(5),423. |
| MLA | XU, TB,et al."RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING".PHYSICS LETTERS A 189.5(1994):423. |
入库方式： OAI收割
来源：物理研究所
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