Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu3Ti4O12 and Pt
文献类型：期刊论文
| 作者 | Chen, G ; Ning, TY ; Wang, C ; Zhou, YL ; Zhang, DX ; Wang, P ; Ming, H ; Yang, GZ |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 28期号:8 |
| 关键词 | HIGH-DIELECTRIC-CONSTANT CURRENT-VOLTAGE BEHAVIOR PULSED-LASER DEPOSITION THIN-FILMS OXIDE CERAMICS |
| ISSN号 | 0256-307X |
| 通讯作者 | Wang, C (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | CaCu3Ti4O12 (CCTO) thin films were fabricated on ITO-covered MgO (100) substrates. The rectification characteristics were observed in the CCTO capacitance structure with Pt top electrodes at temperatures ranging from 150K to 330 K, which are attributed to the formation of a Schottky junction between n-type semiconducting COTO and Pt due to the difference of their work functions. At low forward-bias voltage, the current-voltage characteristics of the Schottky junction follow J = J(sD) exp(qV/k(0)T). A strong decrease in ideality factor with the increasing temperature is obtained by linear fitting at the low bias voltage. |
| 收录类别 | SCI |
| 资助信息 | National Key Basic Research Program of China [2011CB301802] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51950]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, G,Ning, TY,Wang, C,et al. Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu3Ti4O12 and Pt[J]. CHINESE PHYSICS LETTERS,2011,28(8). |
| APA | Chen, G.,Ning, TY.,Wang, C.,Zhou, YL.,Zhang, DX.,...&Yang, GZ.(2011).Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu3Ti4O12 and Pt.CHINESE PHYSICS LETTERS,28(8). |
| MLA | Chen, G,et al."Rectifying Characteristics and Transport Behavior in a Schottky Junction of CaCu3Ti4O12 and Pt".CHINESE PHYSICS LETTERS 28.8(2011). |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。