Reduction of leakage current by Co doping in Pt/Ba0.5Sr0.5TiO3/Nb-SrTiO3 capacitor
文献类型：期刊论文
| 作者 | Wang, SY ; Cheng, BL ; Wang, C ; Dai, SY ; Lu, HB ; Zhou, YL ; Chen, ZH ; Yang, GZ |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2004 |
| 卷号 | 84期号:20页码:4116 |
| 关键词 | (BA HETEROSTRUCTURES RESISTANCE SR)TIO3 THIN-FILMS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Cheng, BL (reprint author), Chinese Acad Sci, Ctr Condensed Matter Phys, Lab Opt Phys, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Effect of Co doping on leakage current has been investigated in capacitor consisting of Ba0.5Sr0.5Ti1-xCoxO3 (BSTC, x=0, 0.002, 0.010) thin film, Pt top electrode, and Nb-doped SrTiO3 (STON) bottom electrode. Co doping remarkably decreases the leakage current in BSTC thin film, such as from 9x10(-7) A in undoped thin film to 8x10(-11) A in 1.0 at. % Co-doped BSTC thin film at bias voltage of 6 V. In the case of the Pt electrode positively biased, the leakage current shows space-charge-limited-current behavior. The trap-filled-limit voltage and the calculated trapped electron density increase with Co concentration in BSTC thin film. The mechanism of the reduction of the leakage current by Co doping is discussed. (C) 2004 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/51976]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, SY,Cheng, BL,Wang, C,et al. Reduction of leakage current by Co doping in Pt/Ba0.5Sr0.5TiO3/Nb-SrTiO3 capacitor[J]. APPLIED PHYSICS LETTERS,2004,84(20):4116. |
| APA | Wang, SY.,Cheng, BL.,Wang, C.,Dai, SY.,Lu, HB.,...&Yang, GZ.(2004).Reduction of leakage current by Co doping in Pt/Ba0.5Sr0.5TiO3/Nb-SrTiO3 capacitor.APPLIED PHYSICS LETTERS,84(20),4116. |
| MLA | Wang, SY,et al."Reduction of leakage current by Co doping in Pt/Ba0.5Sr0.5TiO3/Nb-SrTiO3 capacitor".APPLIED PHYSICS LETTERS 84.20(2004):4116. |
入库方式： OAI收割
来源：物理研究所
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