Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers
文献类型：期刊论文
| 作者 | Peng, CS ; Zhao, ZY ; Chen, H ; Li, JH ; Li, YK ; Guo, LW ; Dai, DY ; Huang, Q ; Zhou, JM ; Zhang, YH ; Sheng, TT ; Tung, CH |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1998 |
| 卷号 | 72期号:24页码:3160 |
| 关键词 | MOLECULAR-BEAM EPITAXY SI/SIGE HETEROSTRUCTURES SURFACE-MORPHOLOGY STRAIN RELAXATION FILMS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Peng, CS (reprint author), Chinese Acad Sci, Inst Phys, POB 603 36, Beijing 100080, Peoples R China. |
| 中文摘要 | Relaxed GexSi1-x epilayers with high Ge fractions but low threading dislocation densities have been successfully grown on Si (001) substrate by employing a stepped-up strategy and a set of low-temperature GeySi1-y buffers. We show that even if the Ge fraction rises up to 90%, the threading dislocation density can be kept lower than 5X10(6) cm(-2) in the top layers, while the total thickness of the structure is no more than 1.7 mu m. (C) 1998 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52040]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Peng, CS,Zhao, ZY,Chen, H,et al. Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers[J]. APPLIED PHYSICS LETTERS,1998,72(24):3160. |
| APA | Peng, CS.,Zhao, ZY.,Chen, H.,Li, JH.,Li, YK.,...&Tung, CH.(1998).Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers.APPLIED PHYSICS LETTERS,72(24),3160. |
| MLA | Peng, CS,et al."Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers".APPLIED PHYSICS LETTERS 72.24(1998):3160. |
入库方式： OAI收割
来源：物理研究所
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