Relaxed GeSi alloy grown on low-temperature buffers by MBE
文献类型：期刊论文
| 作者 | Peng, CS ; Huang, Q ; Zhou, JM ; Zhang, YH ; Tung, CH ; Sheng, TT ; Wang, J |
| 刊名 | SILICON-BASED OPTOELECTRONICS
 |
| 出版日期 | 1999 |
| 卷号 | 3630页码:231 |
| 关键词 | THREADING DISLOCATION STRAIN RELAXATION SI SI(100) LAYERS FILMS |
| ISSN号 | 0277-786X |
| 通讯作者 | Peng, CS (reprint author), Chinese Acad Sci, Inst Phys, POB 603-36, Beijing 100080, Peoples R China. |
| 中文摘要 | We have developed a new MBE growth technique by using low-temperature-Si (LT-Si) or LT-GeSi buffer layers. Even if the Ge fraction up to 90%, the total thickness of fully relaxed GexSi1-x buffers can be reduced to 1.7 mu m with dislocation density lower than 5x10(6) cm(-2). The roughness is no more than 6 nm. According to the analysis of X-ray diffraction, the crystal quality of the top layer is very good, and the strain relaxation is quite inhomogeneous from the beginning of relaxation. By using high resolution cross section TEM, we observed that stacking faults are induced and form. the misfit dislocations in the interface of GeSi/LT-Si. We propose that the formation of the stacking faults is due to the aggregation of the large amount of the vacant defects in the LT-Si layer. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52041]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Peng, CS,Huang, Q,Zhou, JM,et al. Relaxed GeSi alloy grown on low-temperature buffers by MBE[J]. SILICON-BASED OPTOELECTRONICS,1999,3630:231. |
| APA | Peng, CS.,Huang, Q.,Zhou, JM.,Zhang, YH.,Tung, CH.,...&Wang, J.(1999).Relaxed GeSi alloy grown on low-temperature buffers by MBE.SILICON-BASED OPTOELECTRONICS,3630,231. |
| MLA | Peng, CS,et al."Relaxed GeSi alloy grown on low-temperature buffers by MBE".SILICON-BASED OPTOELECTRONICS 3630(1999):231. |
入库方式： OAI收割
来源：物理研究所
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