Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density
文献类型：期刊论文
| 作者 | Li, JH ; Peng, CS ; Wu, Y ; Dai, DY ; Zhou, JM ; Mai, ZH |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1997 |
| 卷号 | 71期号:21页码:3132 |
| 关键词 | MOLECULAR-BEAM EPITAXY SI/SIGE HETEROSTRUCTURES MOBILITY FILMS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Li, JH (reprint author), CHINESE ACAD SCI,INST PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | Si0.7Ge0.3 epilayers with low threading dislocation density have been grown on Si (001) substrates by introducing a low temperature Si buffer. Such a structure can be used as the buffer for the growth of device structures. In comparison with the conventional compositionally graded buffer system, it has the advantages of having lower threading dislocation density, smaller thickness for required degree of relaxation, and smoother surface. Experimental evidence suggests that an anomalous relaxation mechanism has been involved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52042]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, JH,Peng, CS,Wu, Y,et al. Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density[J]. APPLIED PHYSICS LETTERS,1997,71(21):3132. |
| APA | Li, JH,Peng, CS,Wu, Y,Dai, DY,Zhou, JM,&Mai, ZH.(1997).Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density.APPLIED PHYSICS LETTERS,71(21),3132. |
| MLA | Li, JH,et al."Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density".APPLIED PHYSICS LETTERS 71.21(1997):3132. |
入库方式： OAI收割
来源：物理研究所
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