中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Resistance switching at the interface of LaAlO3/SrTiO3

文献类型:期刊论文

作者Chen, YZ ; Zhao, JL ; Sun, JR ; Pryds, N ; Shen, BG
刊名APPLIED PHYSICS LETTERS
出版日期2010
卷号97期号:12
关键词ELECTRON GASES TRANSITION SRTIO3
ISSN号0003-6951
通讯作者Chen, YZ (reprint author), Tech Univ Denmark, Fuel Cells & Solid State Chem Div, Riso Natl Lab Sustainable Energy, DK-4000 Roskilde, Denmark.
中文摘要At the interface of LaAlO3/SrTiO3 with film thickness of 3 unit cells or greater, a reproducible electric-field-induced bipolar resistance switching of the interfacial conduction is observed on nanometer scale by a biased conducting atomic force microscopy under vacuum environment. The switching behavior is suggested to be an intrinsic feature of the SrTiO3 single crystal substrates, which mainly originates from the modulation of oxygen ion transfer in SrTiO3 surface by external electric field in the vicinity of interface, whereas the LaAlO3 film acts as a barrier layer. (C) 2010 American Institute of Physics. [doi:10.1063/1.3490646]
收录类别SCI
资助信息National Basic Research of China; National Natural Science Foundation of China; Chinese Academy of Science; Beijing Municipal Nature Science Foundation
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/52099]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Chen, YZ,Zhao, JL,Sun, JR,et al. Resistance switching at the interface of LaAlO3/SrTiO3[J]. APPLIED PHYSICS LETTERS,2010,97(12).
APA Chen, YZ,Zhao, JL,Sun, JR,Pryds, N,&Shen, BG.(2010).Resistance switching at the interface of LaAlO3/SrTiO3.APPLIED PHYSICS LETTERS,97(12).
MLA Chen, YZ,et al."Resistance switching at the interface of LaAlO3/SrTiO3".APPLIED PHYSICS LETTERS 97.12(2010).

入库方式: OAI收割

来源:物理研究所

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