中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Resistive switching phenomenon driven by antiferromagnetic phase separation in an antiperovskite nitride Mn3ZnN

文献类型:期刊论文

作者Sun, YS ; Guo, YF ; Wang, XX ; Tsujimoto, Y ; Matsushita, Y ; Shi, YG ; Wang, C ; Belik, AA ; Yamaura, K
刊名APPLIED PHYSICS LETTERS
出版日期2012
卷号100期号:16
关键词NONVOLATILE MEMORY
ISSN号0003-6951
通讯作者Sun, YS (reprint author), Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton WPI MANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan.
中文摘要A resistive-switching phenomenon driven by antiferromagnetic phase separation is observed for a manganese nitride Mn3ZnN, which crystallizes in the antiperovskite structure. Measurements of the lattice parameters, magnetic susceptibility, electrical resistivity, and specific heat from 2K to 300K reveal antiferromagnetic phase separation that appears below a temperature of approximately 190 K. The mechanism of the phase separation is highly complicated; nevertheless the accompanying resistive-switching phenomenon is useful for non-volatile memory applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704664]
收录类别SCI
资助信息World Premier International Research Center from the Ministry of Education, Culture, Sports, Science and Technology, Japan; Japan Society for the Promotion of Science [22246083]; JST
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/52104]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Sun, YS,Guo, YF,Wang, XX,et al. Resistive switching phenomenon driven by antiferromagnetic phase separation in an antiperovskite nitride Mn3ZnN[J]. APPLIED PHYSICS LETTERS,2012,100(16).
APA Sun, YS.,Guo, YF.,Wang, XX.,Tsujimoto, Y.,Matsushita, Y.,...&Yamaura, K.(2012).Resistive switching phenomenon driven by antiferromagnetic phase separation in an antiperovskite nitride Mn3ZnN.APPLIED PHYSICS LETTERS,100(16).
MLA Sun, YS,et al."Resistive switching phenomenon driven by antiferromagnetic phase separation in an antiperovskite nitride Mn3ZnN".APPLIED PHYSICS LETTERS 100.16(2012).

入库方式: OAI收割

来源:物理研究所

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