Reversible carriers tunnelling in asymmetric coupled InGaN/GaN quantum wells
文献类型：期刊论文
| 作者 | Pei, XJ ; Guo, LW ; Wang, Y ; Wang, XH ; Jia, HQ ; Chen, H ; Zhou, JM ; Wang, L ; Tamai, N |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:9页码:3470 |
| 关键词 | NONRESONANT ELECTRON PHOTOLUMINESCENCE TIMES RELAXATION DYNAMICS |
| ISSN号 | 0256-307X |
| 通讯作者 | Guo, LW (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | Temperature-dependent photoluminescence (PL) and time resolved photoluminescence (TRPL) are performed to study the PL characteristics and carrier transfer mechanism in asymmetric coupled InGaN/GaN multiple quantum wells (AS-QWs). Our results reveal that abnormal carrier tunnelling from the wide quantum well (WQW) to the narrow quantum well (NQW) is observed at temperature higher than about 100 K, while a normal carrier tunnelling from the NQW to the WQW is observed at temperature lower than 100 K. The reversible carrier tunnelling between the two QWs makes it possible to explore new types of temperature sensitive emission devices. It is shown that PL internal quantum efficiency (IQE) of the NQW is enhanced to about 46% due to the assistant of the abnormal carrier tunnelling. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10574148]; National High-Technology Research and Development Programme of China [2006AA03A106, 2006AA03A107]; National Basic Research Program of China [2002CB311900, 2006CB921300] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52166]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Pei, XJ,Guo, LW,Wang, Y,et al. Reversible carriers tunnelling in asymmetric coupled InGaN/GaN quantum wells[J]. CHINESE PHYSICS LETTERS,2008,25(9):3470. |
| APA | Pei, XJ.,Guo, LW.,Wang, Y.,Wang, XH.,Jia, HQ.,...&Tamai, N.(2008).Reversible carriers tunnelling in asymmetric coupled InGaN/GaN quantum wells.CHINESE PHYSICS LETTERS,25(9),3470. |
| MLA | Pei, XJ,et al."Reversible carriers tunnelling in asymmetric coupled InGaN/GaN quantum wells".CHINESE PHYSICS LETTERS 25.9(2008):3470. |
入库方式： OAI收割
来源：物理研究所
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