中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Rf-induced dc voltages across unbiased terminals and current-voltage characteristics of microwave-driven high-T-c SQUIDs

文献类型:期刊论文

作者Li, J ; Chen, L ; Chen, P ; Ong, CK
刊名SUPERCONDUCTOR SCIENCE & TECHNOLOGY
出版日期2002
卷号15期号:2页码:226
关键词JOSEPHSON-JUNCTIONS
ISSN号0953-2048
通讯作者Li, J (reprint author), Natl Univ Singapore, Ctr Superconducting & Magnet Mat, Lower Kent Ridge Rd, Singapore 119260, Singapore.
中文摘要Quantized voltage across the unbiased terminals of a bicrystal YBa2Cu3O7 dc SQUID exposed to microwave radiation has been observed at 77 K. Using this voltage as an indication of the microwave power coupled to the junctions, we identified three distinct regions in the I-V curves as the microwave power was tuned, similar to those reported for low-T-c SQUID. Pronounced double period steps were observed when the microwave radiation power was high enough to suppress the dc Josephson current completely. Half-integer steps also appeared as the applied dc-magnetic flux was close to half-integers of flux quanta. The experimental phenomenon was explained based on the resistively shunted Josephson junction model.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/52186]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Li, J,Chen, L,Chen, P,et al. Rf-induced dc voltages across unbiased terminals and current-voltage characteristics of microwave-driven high-T-c SQUIDs[J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY,2002,15(2):226.
APA Li, J,Chen, L,Chen, P,&Ong, CK.(2002).Rf-induced dc voltages across unbiased terminals and current-voltage characteristics of microwave-driven high-T-c SQUIDs.SUPERCONDUCTOR SCIENCE & TECHNOLOGY,15(2),226.
MLA Li, J,et al."Rf-induced dc voltages across unbiased terminals and current-voltage characteristics of microwave-driven high-T-c SQUIDs".SUPERCONDUCTOR SCIENCE & TECHNOLOGY 15.2(2002):226.

入库方式: OAI收割

来源:物理研究所

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