RHEED characterization of InAs/GaAs grown by MBE
文献类型：期刊论文
| 作者 | Cai, LC ; Chen, H ; Bao, CL ; Huan, Q ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1999 |
| 卷号 | 197期号:1-2页码:364 |
| 关键词 | MOLECULAR-BEAM EPITAXY ENERGY ELECTRON-DIFFRACTION STRAIN RELAXATION GAAS SURFACE INGAAS INAS INXGA1-XAS (001)GAAS |
| ISSN号 | 0022-0248 |
| 通讯作者 | Cai, LC (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | A simple method is suggested to obtain reflection high-energy electron diffraction (RHEED oscillation of InAs layer grown on a GaAs substrate. The growth process of InAs epilayer as well as the relation between the growth mode and V/III flux ratios are studied by RHEED oscillation. We find that RHEED intensity oscillation exists in the range of flux ratios of V/III from 5.3 to 7.3 under the In-rich conditions and from 10.5 to 22.7 under the As-rich conditions. A step flow growth mode occurs in the range of critical flux ratios of V/III from 7.3 to 10.5. A rough surface is observed at higher flux ratios of V/III under In-rich conditions. (C) 1999 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52188]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cai, LC,Chen, H,Bao, CL,et al. RHEED characterization of InAs/GaAs grown by MBE[J]. JOURNAL OF CRYSTAL GROWTH,1999,197(1-2):364. |
| APA | Cai, LC,Chen, H,Bao, CL,Huan, Q,&Zhou, JM.(1999).RHEED characterization of InAs/GaAs grown by MBE.JOURNAL OF CRYSTAL GROWTH,197(1-2),364. |
| MLA | Cai, LC,et al."RHEED characterization of InAs/GaAs grown by MBE".JOURNAL OF CRYSTAL GROWTH 197.1-2(1999):364. |
入库方式： OAI收割
来源：物理研究所
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