Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment
文献类型：期刊论文
| 作者 | Chen, CY ; He, SL ; Weng, H ; Zhang, WT ; Zhao, L ; Liu, HY ; Jia, XW ; Mou, DX ; Liu, SY ; He, JF ; Peng, YY ; Feng, Y ; Xie, ZJ ; Liu, GD ; Dong, XL ; Zhang, J ; Wang, XY ; Peng, QJ ; Wang, ZM ; Zhang, SJ ; Yang, F ; Chen, CT ; Xu, ZY ; Dai, X ; Fang, Z ; Zhou, XJ |
| 刊名 | PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
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| 出版日期 | 2012 |
| 卷号 | 109期号:10页码:3694 |
| ISSN号 | 0027-8424 |
| 关键词 | SINGLE DIRAC CONE SURFACE-STATES BI2TE3 BI2SE3 LIMIT |
| 通讯作者 | Zhou, XJ (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | The physical property investigation (like transport measurements) and ultimate application of the topological insulators usually involve surfaces that are exposed to ambient environment (1 atm and room temperature). One critical issue is how the topological surface state will behave under such ambient conditions. We report high resolution angle-resolved photoemission measurements to directly probe the surface state of the prototypical topological insulators, Bi2Se3 and Bi2Te3, upon exposing to various environments. We find that the topological order is robust even when the surface is exposed to air at room temperature. However, the surface state is strongly modified after such an exposure. Particularly, we have observed the formation of two-dimensional quantum well states near the exposed surface of the topological insulators. These findings provide key information in understanding the surface properties of the topological insulators under ambient environment and in engineering the topological surface state for applications. |
| 资助信息 | National Natural Science Foundation of China [91021006]; Ministry of Science and Technology of China [2011CB921703] |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52214]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, CY,He, SL,Weng, H,et al. Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA,2012,109(10):3694. |
| APA | Chen, CY.,He, SL.,Weng, H.,Zhang, WT.,Zhao, L.,...&Zhou, XJ.(2012).Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment.PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA,109(10),3694. |
| MLA | Chen, CY,et al."Robustness of topological order and formation of quantum well states in topological insulators exposed to ambient environment".PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA 109.10(2012):3694. |
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来源：物理研究所
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