Role of arsenic clusters in carrier recombination in low-temperature grown AlGaAs/GaAs multiple quantum wells
文献类型:期刊论文
作者 | Feng, W ; Wang, Y ; Wang, J ; Ge, WK ; Huang, Q ; Zhou, JM |
刊名 | APPLIED PHYSICS LETTERS
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出版日期 | 1998 |
卷号 | 72期号:12页码:1463 |
关键词 | MOLECULAR-BEAM EPITAXY GAAS LAYERS LIFETIME DEFECTS |
ISSN号 | 0003-6951 |
通讯作者 | Feng, W (reprint author), Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong. |
中文摘要 | The low-temperature grown AlGaAs/GaAs multiple quantum well structures were characterized by photoluminescence (PL) spectroscopy. The samples were grown at 270-400 degrees C and annealed at 500-900 degrees C. After anneal, photoluminescence quenching was observed for the samples grown at temperatures below 350 degrees C, and found to show a strong dependence on the growth and anneal temperatures. The luminescence intensity for the PL-quenched sample exhibits a power law dependence on the excitation level with an exponent close to 2, indicating a bimolecular recombination process in parallel with strong nonradiative recombination. The photoluminescence quenching upon anneal is attributed to the formation of arsenic clusters that serve as new nonradiative recombination channels. (C) 1998 American Institute of Physics. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
源URL | [http://ir.iphy.ac.cn/handle/311004/52219] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Feng, W,Wang, Y,Wang, J,et al. Role of arsenic clusters in carrier recombination in low-temperature grown AlGaAs/GaAs multiple quantum wells[J]. APPLIED PHYSICS LETTERS,1998,72(12):1463. |
APA | Feng, W,Wang, Y,Wang, J,Ge, WK,Huang, Q,&Zhou, JM.(1998).Role of arsenic clusters in carrier recombination in low-temperature grown AlGaAs/GaAs multiple quantum wells.APPLIED PHYSICS LETTERS,72(12),1463. |
MLA | Feng, W,et al."Role of arsenic clusters in carrier recombination in low-temperature grown AlGaAs/GaAs multiple quantum wells".APPLIED PHYSICS LETTERS 72.12(1998):1463. |
入库方式: OAI收割
来源:物理研究所
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