中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Role of arsenic clusters in carrier recombination in low-temperature grown AlGaAs/GaAs multiple quantum wells

文献类型:期刊论文

作者Feng, W ; Wang, Y ; Wang, J ; Ge, WK ; Huang, Q ; Zhou, JM
刊名APPLIED PHYSICS LETTERS
出版日期1998
卷号72期号:12页码:1463
关键词MOLECULAR-BEAM EPITAXY GAAS LAYERS LIFETIME DEFECTS
ISSN号0003-6951
通讯作者Feng, W (reprint author), Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong.
中文摘要The low-temperature grown AlGaAs/GaAs multiple quantum well structures were characterized by photoluminescence (PL) spectroscopy. The samples were grown at 270-400 degrees C and annealed at 500-900 degrees C. After anneal, photoluminescence quenching was observed for the samples grown at temperatures below 350 degrees C, and found to show a strong dependence on the growth and anneal temperatures. The luminescence intensity for the PL-quenched sample exhibits a power law dependence on the excitation level with an exponent close to 2, indicating a bimolecular recombination process in parallel with strong nonradiative recombination. The photoluminescence quenching upon anneal is attributed to the formation of arsenic clusters that serve as new nonradiative recombination channels. (C) 1998 American Institute of Physics.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/52219]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Feng, W,Wang, Y,Wang, J,et al. Role of arsenic clusters in carrier recombination in low-temperature grown AlGaAs/GaAs multiple quantum wells[J]. APPLIED PHYSICS LETTERS,1998,72(12):1463.
APA Feng, W,Wang, Y,Wang, J,Ge, WK,Huang, Q,&Zhou, JM.(1998).Role of arsenic clusters in carrier recombination in low-temperature grown AlGaAs/GaAs multiple quantum wells.APPLIED PHYSICS LETTERS,72(12),1463.
MLA Feng, W,et al."Role of arsenic clusters in carrier recombination in low-temperature grown AlGaAs/GaAs multiple quantum wells".APPLIED PHYSICS LETTERS 72.12(1998):1463.

入库方式: OAI收割

来源:物理研究所

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