Role of gallium wetting layer in high-quality ZnO growth on sapphire(0001) substrates
文献类型：期刊论文
| 作者 | Zeng, ZQ ; Wang, Y ; Du, XL ; Mei, ZX ; Kong, XH ; Jia, JF ; Xue, QK ; Zhang, Z |
| 刊名 | SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY
 |
| 出版日期 | 2004 |
| 卷号 | 47期号:5页码:612 |
| 关键词 | MOLECULAR-BEAM EPITAXY ALPHA-AL2O3(0001) SURFACE POLARITY DEPENDENCE GAN FILMS TERMINATION |
| ISSN号 | 1672-1799 |
| 通讯作者 | Zeng, ZQ (reprint author), Chinese Acad Sci, State Key Lab Surface Phys, Inst Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | A Ga wetting layer was used to modify the surface structure of sapphire (0001) substrate to prepare high-quality ZnO film by radio frequency plasma-assisted molecule beam epitaxy. We found that this Ga layer plays a crucial role in eliminating 30degrees rotation domains, controlling polarity and decreasing defect density in ZnO epilayers, as demonstrated by in situ reflection high energy electron diffraction, ex situ high resolution X-ray diffraction and high resolution cross-sectional transmission electron microscopy. Zn-polar film of ZnO was determined by convergent beam electron diffraction. A Ga bilayer model is proposed to understand the effects of the Ga wetting layer on high-quality ZnO growth. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52225]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zeng, ZQ,Wang, Y,Du, XL,et al. Role of gallium wetting layer in high-quality ZnO growth on sapphire(0001) substrates[J]. SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY,2004,47(5):612. |
| APA | Zeng, ZQ.,Wang, Y.,Du, XL.,Mei, ZX.,Kong, XH.,...&Zhang, Z.(2004).Role of gallium wetting layer in high-quality ZnO growth on sapphire(0001) substrates.SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY,47(5),612. |
| MLA | Zeng, ZQ,et al."Role of gallium wetting layer in high-quality ZnO growth on sapphire(0001) substrates".SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY 47.5(2004):612. |
入库方式： OAI收割
来源：物理研究所
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