Room temperature photoluminescence evaluation of In0.29Al0.7As/In0.3Ga0.7As/GaAsmetamorphic high electron mobility transistor structures
文献类型：期刊论文
| 作者 | Shang, XZ ; Wu, J ; Wang, WC ; Wang, WX ; Huang, Q ; Zhou, JM |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2007 |
| 卷号 | 51期号:1页码:85 |
| 关键词 | MOLECULAR-BEAM EPITAXY BUFFER LAYERS GAAS SUBSTRATE STRAIN RELAXATION INVERSE STEPS GROWTH HETEROSTRUCTURES DENSITY HEMT |
| ISSN号 | 0038-1101 |
| 通讯作者 | Shang, XZ (reprint author), Hubei Univ, Sch Mat Sci & Engn, Key Lab of Ferroelect & Piezoelect Mat & Devices, Wuhan 430062, Peoples R China. |
| 中文摘要 | The optical and electrical properties of In0.29Al0.71As/In0.3Ga0.7As/GaAs metamorphic high electron mobility transistor (MM-HEMT) structures grown by molecular beam epitaxy were investigated. The RT PL spectrum shows four peaks, corresponding to In0.29Al0.71As layer grown at 380 degrees C (peak C), In0.29Al0.71As layer grown at 520 degrees C (peak D), the e2-hhl and e1-hhl transitions (the second electron and the first subband to first hole subband) in the channel, respectively. The deviation between peak C and peak D is attributed to In desorption due to high growth temperature, strain resulted from incomplete relaxation of metamorphic InAlAs. The sheet carrier concentration (N-s) and electron mobility (mu) decrease with the deviation increasing, which indicates the electrical properties depend on the quality of metamorphic MM buffers significantly. Therefore, the electrical properties of MM-HEMT can be nondestruclively evaluated by room temperature PL spectra. (c) 2006 Published by Elsevier Ltd. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52249]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shang, XZ,Wu, J,Wang, WC,et al. Room temperature photoluminescence evaluation of In0.29Al0.7As/In0.3Ga0.7As/GaAsmetamorphic high electron mobility transistor structures[J]. SOLID-STATE ELECTRONICS,2007,51(1):85. |
| APA | Shang, XZ,Wu, J,Wang, WC,Wang, WX,Huang, Q,&Zhou, JM.(2007).Room temperature photoluminescence evaluation of In0.29Al0.7As/In0.3Ga0.7As/GaAsmetamorphic high electron mobility transistor structures.SOLID-STATE ELECTRONICS,51(1),85. |
| MLA | Shang, XZ,et al."Room temperature photoluminescence evaluation of In0.29Al0.7As/In0.3Ga0.7As/GaAsmetamorphic high electron mobility transistor structures".SOLID-STATE ELECTRONICS 51.1(2007):85. |
入库方式： OAI收割
来源：物理研究所
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