Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering
文献类型：期刊论文
| 作者 | Ran, GZ ; Chen, Y ; Qin, WC ; Fu, JS ; Ma, ZC ; Zong, WH ; Lu, H ; Qin, J ; Qin, GG |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2001 |
| 卷号 | 90期号:11页码:5835 |
| 关键词 | MOLECULAR-BEAM EPITAXY ERBIUM SI PHOTOLUMINESCENCE DIODES |
| ISSN号 | 0021-8979 |
| 通讯作者 | Qin, GG (reprint author), Peking Univ, Dept Phys, Beijing 100871, Peoples R China. |
| 中文摘要 | Room-temperature 1.54 mum electroluminescence (EL) was compared for Au/SiO2:Er/n(+)-Si and Au/SiOx:Si:Er/n(+)-Si diodes under reverse bias. The 18 nm thick SiO2:Er and SiOx:Si:Er films were deposited by the magnetron sputtering technique. The maximum of the EL intensity was reached after annealing at 900 degreesC (SiO2:Er) and 800 degreesC (SiOx:Si:Er). The threshold potential of the EL was about 4 and 6 V for the Au/SiOx:Si:Er/n(+)-Si and Au/SiO2:Er/n(+)-Si diodes, respectively. The power efficiency was larger for the Au/SiOx:Si:Er/n(+)-Si diode than that for the Au/SiO2:Er/n(+)-Si diode by six times. Our experimental results demonstrate that the existence of Si nanoclusters reduces the threshold potentials of the EL and strongly enhances the power efficiency for Er3+ EL. (C) 2001 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52253]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ran, GZ,Chen, Y,Qin, WC,et al. Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering[J]. JOURNAL OF APPLIED PHYSICS,2001,90(11):5835. |
| APA | Ran, GZ.,Chen, Y.,Qin, WC.,Fu, JS.,Ma, ZC.,...&Qin, GG.(2001).Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering.JOURNAL OF APPLIED PHYSICS,90(11),5835. |
| MLA | Ran, GZ,et al."Room-temperature 1.54 mu m electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n(+)-Si substrates by magnetron sputtering".JOURNAL OF APPLIED PHYSICS 90.11(2001):5835. |
入库方式： OAI收割
来源：物理研究所
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