Room-temperature growth of al films on Si(111)-7x7 surface
文献类型：期刊论文
| 作者 | Liu, H ; Zhang, YF ; Wang, DY ; Jia, JF ; Xue, QK |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2004 |
| 卷号 | 21期号:8页码:1608 |
| 关键词 | IONIZED-CLUSTER BEAM EPITAXIAL-GROWTH HETEROEPITAXY DEPOSITION ALUMINUM SILICON |
| ISSN号 | 0256-307X |
| 通讯作者 | Liu, H (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Reflection high energy electron diffraction and scanning tunnelling microscopy (STM) are used to investigate the structure and morphology of Al films deposited on Si(111)-7 x 7 surface at room temperature. The films are polycrystalline, made up of (100) and (111) oriented islands, which primarily result from the interface elastic effect and free surface energies of the Al (100) and (111) surfaces. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52258]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, H,Zhang, YF,Wang, DY,et al. Room-temperature growth of al films on Si(111)-7x7 surface[J]. CHINESE PHYSICS LETTERS,2004,21(8):1608. |
| APA | Liu, H,Zhang, YF,Wang, DY,Jia, JF,&Xue, QK.(2004).Room-temperature growth of al films on Si(111)-7x7 surface.CHINESE PHYSICS LETTERS,21(8),1608. |
| MLA | Liu, H,et al."Room-temperature growth of al films on Si(111)-7x7 surface".CHINESE PHYSICS LETTERS 21.8(2004):1608. |
入库方式： OAI收割
来源：物理研究所
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