Roughening and islanding of monolayer Ge coverage on vicinal Si(001) surface
文献类型：期刊论文
| 作者 | Guo, LW ; Lin, N ; Huang, Q ; Zhou, JM ; Cue, N |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 1998 |
| 卷号 | 126期号:3-4页码:213 |
| 关键词 | STRAIN GROWTH LAYER SI(100) MORPHOLOGY EPITAXY STRESS |
| ISSN号 | 0169-4332 |
| 通讯作者 | Guo, LW (reprint author), Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China. |
| 中文摘要 | Roughening and islanding of monolayer Ce coverage on vicinal Si(001) surface has been studied using scanning tunneling microscope (STM). For a 3.9 degrees miscut surface, planar buckled-dimer surface is a metastable state limited by a barrier, which can be overcome by a 680 degrees C annealing. After the annealing, the metastable flat surface has been changed to a rough surface of small hills because of step-bunching, and on top of each hill, a 3 dimensional (3D) nanoscale island was observed. The mechanism of this roughening and islanding process have been discussed. (C) 1998 Elsevier Science B.V. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52271]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Guo, LW,Lin, N,Huang, Q,et al. Roughening and islanding of monolayer Ge coverage on vicinal Si(001) surface[J]. APPLIED SURFACE SCIENCE,1998,126(3-4):213. |
| APA | Guo, LW,Lin, N,Huang, Q,Zhou, JM,&Cue, N.(1998).Roughening and islanding of monolayer Ge coverage on vicinal Si(001) surface.APPLIED SURFACE SCIENCE,126(3-4),213. |
| MLA | Guo, LW,et al."Roughening and islanding of monolayer Ge coverage on vicinal Si(001) surface".APPLIED SURFACE SCIENCE 126.3-4(1998):213. |
入库方式： OAI收割
来源：物理研究所
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