Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Cao, YG ; Xie, MH ; Liu, Y ; Xu, SH ; Ng, YF ; Wu, HS ; Tong, SY |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2003 |
| 卷号 | 68期号:16 |
| 关键词 | ASSEMBLED QUANTUM DOTS STEP-FLOW GROWTH SIZE SURFACES STRAIN HETEROEPITAXY HOMOEPITAXY MORPHOLOGY DEPOSITION INAS |
| ISSN号 | 1098-0121 |
| 通讯作者 | Xie, MH (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. |
| 中文摘要 | The scaling property of three-dimensional InN islands nucleated on GaN(0001) surface during molecular-beam epitaxy (MBE) is investigated. Due to the large lattice mismatch between InN and GaN (similar to10%), the islands formed from the Stranski-Krastanow growth mode are dislocated. Despite the variations in (residual) strain and the shape, both the island size and pair separation distributions show the scaling behavior. Further, the size distribution resembles that for submonolayer homoepitaxy with the critical island size i=1, suggesting that detachment of atoms is not significant. The above results also indicate strain is insignificant in determining the nucleation and growth of dislocated islands during heteroepitaxy by MBE. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52320]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cao, YG,Xie, MH,Liu, Y,et al. Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy[J]. PHYSICAL REVIEW B,2003,68(16). |
| APA | Cao, YG.,Xie, MH.,Liu, Y.,Xu, SH.,Ng, YF.,...&Tong, SY.(2003).Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy.PHYSICAL REVIEW B,68(16). |
| MLA | Cao, YG,et al."Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy".PHYSICAL REVIEW B 68.16(2003). |
入库方式： OAI收割
来源：物理研究所
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