Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces
文献类型：期刊论文
| 作者 | Xue, QK ; Hashizume, T ; Sakurai, T |
| 刊名 | PROGRESS IN SURFACE SCIENCE
 |
| 出版日期 | 1997 |
| 卷号 | 56期号:1-2页码:1 |
| ISSN号 | 0079-6816 |
| 通讯作者 | Xue, QK (reprint author), Tohoku Univ, Inst Mat Res, Sendai, Miyagi 98077, Japan. |
| 中文摘要 | While the (001) oriented substrate of compound semiconductors are most commonly used in fabrication of wireless and opto-electronic devices by molecular beam epitaxy, metallorganic chemical vapor deposition and related techniques, their surface structures have been puzzling from the beginning of the development of the techniques with which these materials are artificially prepared. This paper reviews the advances in comprehensive understanding of the geometric and electronic structures and chemical properties of the principal reconstructions found on the (001) surface of III-V compound semiconductors including arsenides, such as GaAs, InAs and AlAs, phosphides, such as GaP and InP, antimonides, such as GaSb, AlSb and InSb, and also nitrides (GaN), with the emphasis on the GaAs(001), during the first decade following the invention of scanning tunneling microscopy. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52331]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xue, QK,Hashizume, T,Sakurai, T. Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces[J]. PROGRESS IN SURFACE SCIENCE,1997,56(1-2):1. |
| APA | Xue, QK,Hashizume, T,&Sakurai, T.(1997).Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces.PROGRESS IN SURFACE SCIENCE,56(1-2),1. |
| MLA | Xue, QK,et al."Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces".PROGRESS IN SURFACE SCIENCE 56.1-2(1997):1. |
入库方式： OAI收割
来源：物理研究所
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