Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe
文献类型：期刊论文
| 作者 | Wang, YL ; Jiang, YP ; Chen, M ; Li, Z ; Song, CL ; Wang, LL ; He, K ; Chen, X ; Ma, XC ; Xue, QK |
| 刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
 |
| 出版日期 | 2012 |
| 卷号 | 24期号:47 |
| 关键词 | DER-WAALS EPITAXY VANDERWAALS EPITAXY MOIRE PATTERN NOBEL LECTURE THIN-FILMS GRAPHENE GROWTH IMAGES SUPERCONDUCTIVITY SURFACE |
| ISSN号 | 0953-8984 |
| 通讯作者 | Wang, YL (reprint author), Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | We investigate the heteroepitaxial growth of Bi2Se3 films on FeSe substrates by low-temperature scanning tunneling microscopy/spectroscopy. The growth of Bi2Se3 on FeSe proceeds via van der Waals epitaxy with atomically flat morphology. A striped moire pattern originating from the lattice mismatch between Bi2Se3 and FeSe is observed. Tunneling spectra reveal the spatially inhomogeneous electronic structure of the Bi2Se3 thin films, which can be ascribed to the charge transfer at the interface. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China; Ministry of Science and Technology of China; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52332]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, YL,Jiang, YP,Chen, M,et al. Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2012,24(47). |
| APA | Wang, YL.,Jiang, YP.,Chen, M.,Li, Z.,Song, CL.,...&Xue, QK.(2012).Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe.JOURNAL OF PHYSICS-CONDENSED MATTER,24(47). |
| MLA | Wang, YL,et al."Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe".JOURNAL OF PHYSICS-CONDENSED MATTER 24.47(2012). |
入库方式： OAI收割
来源：物理研究所
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