Self-assembled growth of ordered Ge nanoclusters on the Si(111)-(7 x 7) surface
文献类型：期刊论文
| 作者 | Zhang, YP ; Yan, L ; Xie, SS ; Pang, SJ ; Gao, HJ |
| 刊名 | SURFACE SCIENCE
 |
| 出版日期 | 2002 |
| 卷号 | 497期号:1-3页码:L60 |
| 关键词 | SCANNING-TUNNELING-MICROSCOPY ORGANIZED GROWTH DIFFUSION ARRAYS ATOMS |
| ISSN号 | 0039-6028 |
| 通讯作者 | Zhang, YP (reprint author), Chinese Acad Sci, Beijing Lab Vacuum Phys, Inst Phys, POB 2724, Beijing 100080, Peoples R China. |
| 中文摘要 | The self-assembled growth of submonolayer Ge on the Si(111)-(7 x 7) surface grown by solid phase epitaxy has been studied using scanning tunneling microscopy. Ordered Ge nanoclusters on the surface are formed by the deposition of the submonolayer of Ge at room temperature and subsequent annealing. It is proposed that adsorbate Ge atoms are trapped in the attractive potential wells on the faulted half of the (7 x 7) unit cell. (C) 2001 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52396]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, YP,Yan, L,Xie, SS,et al. Self-assembled growth of ordered Ge nanoclusters on the Si(111)-(7 x 7) surface[J]. SURFACE SCIENCE,2002,497(1-3):L60. |
| APA | Zhang, YP,Yan, L,Xie, SS,Pang, SJ,&Gao, HJ.(2002).Self-assembled growth of ordered Ge nanoclusters on the Si(111)-(7 x 7) surface.SURFACE SCIENCE,497(1-3),L60. |
| MLA | Zhang, YP,et al."Self-assembled growth of ordered Ge nanoclusters on the Si(111)-(7 x 7) surface".SURFACE SCIENCE 497.1-3(2002):L60. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。