Self-assembled Sn nanoplatelets on Si(111)-2 root 3 x 2 root 3-Sn surfaces
文献类型：期刊论文
| 作者 | Shen, QT ; Li, WJ ; Dong, GC ; Sun, GF ; Sun, YJ ; Ma, XC ; Jia, JF ; Xue, QK |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2009 |
| 卷号 | 42期号:1 |
| ISSN号 | 0022-3727 |
| 关键词 | GROWTH ISLANDS SI(111) ARRAYS NANOSTRUCTURES SI(001) GAAS GE |
| 通讯作者 | Shen, QT (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Room temperature growth of Sn on Sn-induced Si(1 1 1)-2 root 3 x 2 root 3 surfaces is investigated by scanning tunneling microscopy. On the Si(1 1 1)-2 root 3 x 2 root 3-Sn surfaces, uniform arrays of hexagonal Sn nanoplatelets with narrow lateral size distribution are obtained. The experimental data show that the preferred lateral island size varies with Sn coverage. This variation can be explained in terms of island-island interactions. As a result of quantum size effects, the Sn islands exhibit preferred heights. |
| 资助信息 | National Science Foundation and Ministry of Science and Technology of China |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52401]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shen, QT,Li, WJ,Dong, GC,et al. Self-assembled Sn nanoplatelets on Si(111)-2 root 3 x 2 root 3-Sn surfaces[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009,42(1). |
| APA | Shen, QT.,Li, WJ.,Dong, GC.,Sun, GF.,Sun, YJ.,...&Xue, QK.(2009).Self-assembled Sn nanoplatelets on Si(111)-2 root 3 x 2 root 3-Sn surfaces.JOURNAL OF PHYSICS D-APPLIED PHYSICS,42(1). |
| MLA | Shen, QT,et al."Self-assembled Sn nanoplatelets on Si(111)-2 root 3 x 2 root 3-Sn surfaces".JOURNAL OF PHYSICS D-APPLIED PHYSICS 42.1(2009). |
入库方式： OAI收割
来源：物理研究所
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