中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN

文献类型:期刊论文

作者Wang, L ; Hu, Y ; Li, Z ; Tang, JC ; Wang, XS
刊名NANOTECHNOLOGY
出版日期2002
卷号13期号:6页码:714
关键词TRANSMISSION ELECTRON-MICROSCOPY MOLECULAR-BEAM EPITAXY SILICON CLUSTERS OPTICAL-PROPERTIES NANOCRYSTALS NANOSTRUCTURES NANOPARTICLES NANOCLUSTERS ASSEMBLIES FILMS
ISSN号0957-4484
通讯作者Wang, XS (reprint author), Zhejiang Univ, Hangzhou 310027, Peoples R China.
中文摘要The nucleation and growth of Si and Ge clusters/crystallites on SiNx films, which act as relative inert substrates, proceed in a quite complicated manner compared with conventional epitaxial processes. We examine the size dependence of the shape. surface structures and orientation of nano-scale clusters/crystallites. Facets are not observed until the crystallite diameter reaches similar to40 nm. Due to the isotropic surface energy and a weak interaction with the substrate, the orientation of the clusters/crystallites is random initially. A preferred orientation, however, emerges on crystalline SiNx films as the crystallite size increases. The growth nature of nano-particles, their interactions with the substrates and among a themselves determine the overlayer texture as the amount of material deposition increases.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/52501]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wang, L,Hu, Y,Li, Z,et al. Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN[J]. NANOTECHNOLOGY,2002,13(6):714.
APA Wang, L,Hu, Y,Li, Z,Tang, JC,&Wang, XS.(2002).Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN.NANOTECHNOLOGY,13(6),714.
MLA Wang, L,et al."Shape, orientation and surface structure of Si and Ge nano-particles grown on SiN".NANOTECHNOLOGY 13.6(2002):714.

入库方式: OAI收割

来源:物理研究所

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