Sharp exciton photoluminescence in low-temperature-grown GaAs/AlGaAs multiple quantum wells
文献类型：期刊论文
| 作者 | Guo, LW ; Han, YJ ; Bao, CL ; Dai, DY ; Huang, Q ; Zhou, JM |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
 |
| 出版日期 | 2002 |
| 卷号 | 41期号:6A页码:3762 |
| 关键词 | MOLECULAR-BEAM EPITAXY INTERFACE DISORDER OPTICAL CHARACTERIZATION SUBSTRATE-TEMPERATURE GAAS SEMICONDUCTORS DEPENDENCE ALGAAS |
| ISSN号 | 0021-4922 |
| 通讯作者 | Guo, LW (reprint author), Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | We demonstrate the fabrication of high-quality GaAs/AlGaAs multiple quantum wells (MWSs) at very low temperature by solid-state source molecular beam epitaxy. The key to Our method is to maintain a critical critical pressure or As/Ga beam equivalent pressure ratio to ensure a sharp heterointerface and a low defect density. A sharp heavy-hole excitonic photoluminescence (PL) signal was observed from the MQWs with a kell width of 7.5 nm and a barrier width of 4 nm grown at 360 degreesC. The PL linewidth of the QW heavy-hole exciton is 3 meV Measured Lit 77 K. This emission linewidth is far narrower than that in a sample with the same structure grown at the standard growth temperature. The resistivity of the as-grown sample is about 5 x 10(6) Omegacm and increases to 5 x 10(7) Omegacm after postgrowth annealing at 700 degreesC. The low growth temperature and high optical quality as kell as the high resistivity make this kind of material Suitable for use in ultrafast optical and monolithic integrated optoelectronic devices. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52506]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Guo, LW,Han, YJ,Bao, CL,et al. Sharp exciton photoluminescence in low-temperature-grown GaAs/AlGaAs multiple quantum wells[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,2002,41(6A):3762. |
| APA | Guo, LW,Han, YJ,Bao, CL,Dai, DY,Huang, Q,&Zhou, JM.(2002).Sharp exciton photoluminescence in low-temperature-grown GaAs/AlGaAs multiple quantum wells.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,41(6A),3762. |
| MLA | Guo, LW,et al."Sharp exciton photoluminescence in low-temperature-grown GaAs/AlGaAs multiple quantum wells".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41.6A(2002):3762. |
入库方式： OAI收割
来源：物理研究所
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