Si single-electron transistors with in-plane point-contact metal gates
文献类型：期刊论文
| 作者 | Wang, TH ; Li, HW ; Zhou, JM |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2001 |
| 卷号 | 78期号:15页码:2160 |
| 关键词 | COULOMB-BLOCKADE OSCILLATIONS QUANTUM-DOT VOLTAGE DEVICE |
| ISSN号 | 0003-6951 |
| 通讯作者 | Wang, TH (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | We report on the operation of Si single-electron transistors with in-plane point-contact metal gates. These in-plane gates are fabricated by a self-aligned process, which are used to squeeze the channel and to form a single dot at the constriction of the channel. The characteristics of such single-electron transistors strongly depend on the channel width and the voltage of the in-plane gates. A few dips are observed at the less positive gate voltages for a device with a 70 nm wide channel. Applying negative voltages to the in-plane gates leads to the formation of a single dot in the conducting channel. These in-plane gates facilitate fabricating Si single-electron transistors with single dot structures. (C) 2001 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52524]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, TH,Li, HW,Zhou, JM. Si single-electron transistors with in-plane point-contact metal gates[J]. APPLIED PHYSICS LETTERS,2001,78(15):2160. |
| APA | Wang, TH,Li, HW,&Zhou, JM.(2001).Si single-electron transistors with in-plane point-contact metal gates.APPLIED PHYSICS LETTERS,78(15),2160. |
| MLA | Wang, TH,et al."Si single-electron transistors with in-plane point-contact metal gates".APPLIED PHYSICS LETTERS 78.15(2001):2160. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。