中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
SiC nanowire networks

文献类型:期刊论文

作者Li, HJ ; Li, ZJ ; Meng, AL ; Li, KZ ; Zhang, XN ; Xu, YP
刊名JOURNAL OF ALLOYS AND COMPOUNDS
出版日期2003
卷号352期号:1-2页码:279
关键词BETA-SILICON-CARBIDE FIELD-EMISSION NANORODS NANOTUBES STRENGTH GROWTH
ISSN号0925-8388
通讯作者Li, ZJ (reprint author), Northwestern Polytech Univ, Coll Mat Sci & Engn, Xian 710072, Peoples R China.
中文摘要Novel 2-D semiconductor SiC nanonetworks have been synthesized at relatively low-temperature via a new method (chemical vapor reaction approach) in a homemade graphite reaction cell. The mixture of milled Si and SiC powder and C,He were chosen as the starting materials. EDX, XRD and HRTEM indicated that the nanonetworks are formed by interconnecting nanowires. The nanowires with diameter of about 20-70 nm are single crystalline beta-SiC and the growth direction is along [111]. A growth mechanism of beta-SiC nanowire networks is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/52534]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Li, HJ,Li, ZJ,Meng, AL,et al. SiC nanowire networks[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2003,352(1-2):279.
APA Li, HJ,Li, ZJ,Meng, AL,Li, KZ,Zhang, XN,&Xu, YP.(2003).SiC nanowire networks.JOURNAL OF ALLOYS AND COMPOUNDS,352(1-2),279.
MLA Li, HJ,et al."SiC nanowire networks".JOURNAL OF ALLOYS AND COMPOUNDS 352.1-2(2003):279.

入库方式: OAI收割

来源:物理研究所

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