Silane photoabsorption spectra near the Si 2p thresholds: the geometry of Si 2p excited SiH4
文献类型:期刊论文
作者 | Zhang, WH ; Xu, RQ ; Li, JM |
刊名 | CHINESE PHYSICS
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出版日期 | 2003 |
卷号 | 12期号:3页码:275 |
关键词 | ABSOLUTE OSCILLATOR-STRENGTHS MOLECULAR RYDBERG STATES INNER-SHELL EXCITATION QUANTUM DEFECT THEORY DIATOMIC-MOLECULES HIGH-RESOLUTION PHOTOIONIZATION HYDROGEN VALENCE NO2 |
ISSN号 | 1009-1963 |
通讯作者 | Zhang, WH (reprint author), Tsing Hua Univ, Dept Phys, Ctr Atom & Mol Nanosci, Beijing 100084, Peoples R China. |
中文摘要 | Based on the multiple-scattering self-consistent-field method, we have studied the photoabsorption spectra near the Si 2p thresholds of silane. According to our calculations, the clear assignments of the inner-shell photoabsorption spectra are provided. In comparison with the high-resolution experimental spectra, the geometric structure of the Si 2p-excited SiH4** is recommended to be of a C-2v, Symmetry. More specifically, the Si 2p-excited SiH4** have two bond lengths of 2.50 a.u. and another two bond lengths of 2.77 a.u., and the corresponding two bond angles are 104.0degrees and 112.5degrees respectively. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
源URL | [http://ir.iphy.ac.cn/handle/311004/52552] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Zhang, WH,Xu, RQ,Li, JM. Silane photoabsorption spectra near the Si 2p thresholds: the geometry of Si 2p excited SiH4[J]. CHINESE PHYSICS,2003,12(3):275. |
APA | Zhang, WH,Xu, RQ,&Li, JM.(2003).Silane photoabsorption spectra near the Si 2p thresholds: the geometry of Si 2p excited SiH4.CHINESE PHYSICS,12(3),275. |
MLA | Zhang, WH,et al."Silane photoabsorption spectra near the Si 2p thresholds: the geometry of Si 2p excited SiH4".CHINESE PHYSICS 12.3(2003):275. |
入库方式: OAI收割
来源:物理研究所
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