Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)
文献类型：期刊论文
| 作者 | Mao, JH ; Huang, L ; Pan, Y ; Gao, M ; He, JF ; Zhou, HT ; Guo, HM ; Tian, Y ; Zou, Q ; Zhang, LZ ; Zhang, HG ; Wang, YL ; Du, SX ; Zhou, XJ ; Neto, AHC ; Gao, HJ |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 100期号:9 |
| 关键词 | ELECTRONIC-STRUCTURE SPECTROSCOPY SURFACE |
| ISSN号 | 0003-6951 |
| 通讯作者 | Mao, JH (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3687190] |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation of China; National "973" project of China [2009CB929103, 2011CB932700]; Chinese Academy of Sciences; Shanghai Supercomputing Center, China; DOE [DE-FG02-08ER46512] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52558]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Mao, JH,Huang, L,Pan, Y,et al. Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)[J]. APPLIED PHYSICS LETTERS,2012,100(9). |
| APA | Mao, JH.,Huang, L.,Pan, Y.,Gao, M.,He, JF.,...&Gao, HJ.(2012).Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001).APPLIED PHYSICS LETTERS,100(9). |
| MLA | Mao, JH,et al."Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)".APPLIED PHYSICS LETTERS 100.9(2012). |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。