Silicon nanowires grown on a pre-annealed Si substrate
文献类型：期刊论文
| 作者 | Zeng, XB ; Xu, YY ; Zhang, SB ; Hu, ZH ; Diao, HW ; Wang, YQ ; Kong, GL ; Liao, XB |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2003 |
| 卷号 | 247期号:1-2页码:13 |
| 关键词 | LASER-ABLATION SEMICONDUCTOR NANOWIRES MECHANISM EVAPORATION DIAMETER WIRES |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zeng, XB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. |
| 中文摘要 | Polycrystalline Si nanowires (poly SiNWS) were successfully synthesized by plasma-enhanced chemical vapor deposition (PECVD) at 440degreesC using silane as the Si source and Au as the catalyst. The diameters of Si nanowires range from 15 to 100nm. The growth process indicates that to fabricate SiNWS by PECVD, pre-annealing at high temperature is necessary. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique. (C) 2002 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52559]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zeng, XB,Xu, YY,Zhang, SB,et al. Silicon nanowires grown on a pre-annealed Si substrate[J]. JOURNAL OF CRYSTAL GROWTH,2003,247(1-2):13. |
| APA | Zeng, XB.,Xu, YY.,Zhang, SB.,Hu, ZH.,Diao, HW.,...&Liao, XB.(2003).Silicon nanowires grown on a pre-annealed Si substrate.JOURNAL OF CRYSTAL GROWTH,247(1-2),13. |
| MLA | Zeng, XB,et al."Silicon nanowires grown on a pre-annealed Si substrate".JOURNAL OF CRYSTAL GROWTH 247.1-2(2003):13. |
入库方式： OAI收割
来源：物理研究所
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