中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS

文献类型:期刊论文

作者DU, QH ; WANG, ZG ; MAO, JM
刊名PHYSICAL REVIEW B
出版日期1994
卷号49期号:24页码:17452
关键词ONE-DIMENSIONAL CONDUCTION PARABOLIC QUANTUM-WELL 2D ELECTRON-GAS MAGNETIC DEPOPULATION MAGNETOOPTICAL ABSORPTION SUBBANDS WIRES HETEROSTRUCTURES HETEROJUNCTION STATES
ISSN号0163-1829
通讯作者DU, QH (reprint author), CHINA CTR ADV SCI & TECHNOL,WORLD LAB,POB 8730,BEIJING 100080,PEOPLES R CHINA.
中文摘要A theoretical study is presented of the lateral confinement potential (CP) in the very narrow mesa channels fabricated in the conventional two-dimensional (2D) electron gas in GaAs-AlxGa1-xAs heterostructures. The ID electronic structures are calculated in the framework of the confinement potential: V(x) = m* omega0(2)x2/2 for Absolute value of x
收录类别SCI
语种英语
公开日期2013-09-24
源URL[http://ir.iphy.ac.cn/handle/311004/52584]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
DU, QH,WANG, ZG,MAO, JM. SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS[J]. PHYSICAL REVIEW B,1994,49(24):17452.
APA DU, QH,WANG, ZG,&MAO, JM.(1994).SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS.PHYSICAL REVIEW B,49(24),17452.
MLA DU, QH,et al."SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS".PHYSICAL REVIEW B 49.24(1994):17452.

入库方式: OAI收割

来源:物理研究所

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