Single-charge tunneling in uncoupled boron-doped silicon nanochains
文献类型：期刊论文
| 作者 | Ma, DDD ; Chan, KS ; Chen, DM ; Lee, ST |
| 刊名 | CHEMICAL PHYSICS LETTERS
 |
| 出版日期 | 2010 |
| 卷号 | 484期号:4-6页码:258 |
| 关键词 | ATOMIC-SCALE NANOWIRES DEVICE |
| ISSN号 | 0009-2614 |
| 通讯作者 | Lee, ST (reprint author), City Univ Hong Kong, Ctr Super Diamond & Adv Films COSDAF, Hong Kong, Hong Kong, Peoples R China. |
| 中文摘要 | Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements have been performed on boron-doped silicon nanochains (BDSNs). STM results suggest BDSNs may be an excellent nanostructure to build single-charge tunneling transistors. STS measurements clearly reveal Coulomb blockade (CB) effects in BDSN at 25 K with a large charging energy, which should make CB effect observable even at RT. The CB characteristics are attributed to boron-or impurity-induced local states at the surface or interface. The experimental results suggest the possibility of realizing single-charge nanodevices by exploiting boron-or defect-induced charge trapping and de-trapping processes at the nanoparticles of BDSNs. (C) 2009 Elsevier B. V. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | Research Grants Council of Hong Kong SAR, China [CityU5/CRF/08]; NSFC/RGC Joint Research Scheme [N_CityU108/08]; National Basic Research Program of China [2006CB933000]; National High-tech R&D Program of China [2006AA03Z302] |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52626]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ma, DDD,Chan, KS,Chen, DM,et al. Single-charge tunneling in uncoupled boron-doped silicon nanochains[J]. CHEMICAL PHYSICS LETTERS,2010,484(4-6):258. |
| APA | Ma, DDD,Chan, KS,Chen, DM,&Lee, ST.(2010).Single-charge tunneling in uncoupled boron-doped silicon nanochains.CHEMICAL PHYSICS LETTERS,484(4-6),258. |
| MLA | Ma, DDD,et al."Single-charge tunneling in uncoupled boron-doped silicon nanochains".CHEMICAL PHYSICS LETTERS 484.4-6(2010):258. |
入库方式： OAI收割
来源：物理研究所
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