Single-crystal growth: From new borates to industrial semiconductors
文献类型：期刊论文
| 作者 | Wang, G ; Chen, XL |
| 刊名 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
 |
| 出版日期 | 2010 |
| 卷号 | 207期号:12页码:2757 |
| 关键词 | NONLINEAR-OPTICAL CRYSTAL SHARING BO4 TETRAHEDRA FUNDAMENTAL BUILDING-BLOCK HIGH-PRESSURE PREPARATION BROAD-BAND AMPLIFICATION SIC BULK CRYSTAL PVT METHOD LI3N FLUX LUMINESCENCE PROPERTIES NEGATIVE REFRACTION |
| ISSN号 | 1862-6300 |
| 通讯作者 | Chen, XL (reprint author), Chinese Acad Sci, Res & Dev Ctr Funct Crystals, Beijing Natl Lab Condensed Matter Phys, Inst Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | In this paper, we present our progresses on single-crystal growth of a variety of compounds from new borates to industrial semiconductors, reflecting our efforts in new compounds exploration, structure analysis, property characterization, flux growth, and vapor growth of industrial semiconductors. Typical examples are selected with each serving to show one theme. YBa3B9O18 and ErBa3B9O18, two members of a newly discovered series RBa3B9O18 (R = Y, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb) are found to be potential scintillation materials and laser hosts. KZnB3O6, the first borate with edge-sharing BO4 tetrahedra obtained under ambient conditions, shows a very interesting selective ion exchange. The study of a well-known crystal YVO4 reveals that the negative refraction (NR) is an intrinsic property of all uniaxial crystals. For technically important crystals, our emphases are placed on the study of growth methods. GaN is successfully realized to grow under very facile conditions based on a flux method developed from combining the phase relation calculation and experiments. Achievements on growth of 2-4 inch quality SiC wafers, both semi-insulating and conducting, through improved physical vapor transport (PVT) method are also reported. A brief summary and our perspectives on crystal growth are given at the end. [GRAPHICS] 2-4-inch n-type4H-SiC wafers grown by a PVT method. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China; Ministry of Science and Technology of China; Chinese Academy of Sciences, Beijing Municipal Science and Technology Commission; International Centre for Diffraction Data (ICDD, USA) |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52631]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, G,Chen, XL. Single-crystal growth: From new borates to industrial semiconductors[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2010,207(12):2757. |
| APA | Wang, G,&Chen, XL.(2010).Single-crystal growth: From new borates to industrial semiconductors.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,207(12),2757. |
| MLA | Wang, G,et al."Single-crystal growth: From new borates to industrial semiconductors".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 207.12(2010):2757. |
入库方式： OAI收割
来源：物理研究所
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