Single-electron charging in a parallel dot structure
文献类型：期刊论文
| 作者 | Wang, TH ; Aoyagi, Y |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2001 |
| 卷号 | 78期号:5页码:634 |
| 关键词 | QUANTUM HALL REGIME TRANSPORT |
| ISSN号 | 0003-6951 |
| 通讯作者 | Wang, TH (reprint author), Inst Phys & Chem Res, Semicond Res Lab, 2-1 Hirosawa, Wako, Saitama 35101, Japan. |
| 中文摘要 | A parallel dot structure, which is not conductively coupled but capacitively coupled, is fabricated. Both of the respective single dots show clear Coulomb blockade oscillations (CBOs) as their gate voltages are scanned. Single-electron charging in one dot causes oscillations of the current through another dot, even in the regime of more negative gate voltages where the CBOs cannot be observed due to a too weak current. In addition, information on the energy levels in one dot can be obtained. (C) 2001 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52640]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, TH,Aoyagi, Y. Single-electron charging in a parallel dot structure[J]. APPLIED PHYSICS LETTERS,2001,78(5):634. |
| APA | Wang, TH,&Aoyagi, Y.(2001).Single-electron charging in a parallel dot structure.APPLIED PHYSICS LETTERS,78(5),634. |
| MLA | Wang, TH,et al."Single-electron charging in a parallel dot structure".APPLIED PHYSICS LETTERS 78.5(2001):634. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。