Space growth studies of Ce-doped Bi12SiO20 single crystal
文献类型：期刊论文
| 作者 | Zhou, YF ; Wang, JC ; Tang, LA ; Pan, ZL ; Chen, NF ; Chen, WC ; Huang, YY ; He, W |
| 刊名 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
 |
| 出版日期 | 2004 |
| 卷号 | 113期号:3页码:179 |
| 关键词 | BI12GEO20 |
| ISSN号 | 0921-5107 |
| 通讯作者 | Zhou, YF (reprint author), Chinese Acad Sci, Shanghai Inst Ceram, 1295 Dingxi Rd, Shanghai 200050, Peoples R China. |
| 中文摘要 | Surface modification of sapphire (0001) by Ga can eliminate multiple rotation domains in ZnO films. The existence of Ga at ZnO/sapphire interface was confirmed by x-ray energy dispersive spectroscopy in a transmission electron microscope. Atomic detail of mismatch dislocations at interface was imaged by high resolution transmission electron microscopy. Inside the ZnO film, there is a high density of stacking fault. Both pure gliding of ZnO (0001) plane and condensation of vacancies or interstatials are possible mechanisms to generate the stacking fault. (C) 2004 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-24 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/52792]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhou, YF,Wang, JC,Tang, LA,et al. Space growth studies of Ce-doped Bi12SiO20 single crystal[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2004,113(3):179. |
| APA | Zhou, YF.,Wang, JC.,Tang, LA.,Pan, ZL.,Chen, NF.,...&He, W.(2004).Space growth studies of Ce-doped Bi12SiO20 single crystal.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,113(3),179. |
| MLA | Zhou, YF,et al."Space growth studies of Ce-doped Bi12SiO20 single crystal".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 113.3(2004):179. |
入库方式： OAI收割
来源：物理研究所
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